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Profil
| Derzeitige Stellung | Professor W-1 und Äquivalente |
|---|---|
| Fachgebiet | Elementarteilchenphysik |
| Keywords | semiconductors, electrically active defects, high-k dielectrics, Radiation defects, Radiation hardness |
Aktuelle Kontaktadresse
| Land | Rumänien |
|---|---|
| Ort | Magurele, Ilfov |
| Universität/Institution | National Institute of Materials Physics |
Gastgeber*innen während der Förderung
| Prof. Dr. Robert Klanner | Institut für Experimentalphysik, Universität Hamburg, Hamburg |
|---|---|
| Beginn der ersten Förderung | 01.06.2006 |
Programm(e)
| 2005 | Humboldt-Forschungsstipendien-Programm |
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Publikationen (Auswahl)
| 2008 | Ioana Pintilie, Eckhart Fretwurst, Gunnar Lindström: Cluster related hole traps with enhanced-field-emission - the source for long term annealing in hadron irradiated Si diodes . In: Applied Physics Letters, 2008, 024101-024103 |
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| 2007 | Frank Hönniger, Eckhart Fretwurst, Gunnar Lindström, Gregor Kramberger, Ioana Pintilie and Ralf Röder: DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 104-108 |
| 2007 | Eckhart Fretwurst, Frank Hönniger, Gregor Kramberger, Gunnar Lindström, Ioana Pintilie and Ralf Röder: Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 58-63 |